Related papers: Spin-Lattice Relaxation in Si Quantum Dots
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along…
We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of…
We study the spin relaxation in an interacting two--dimensional electron gas in a strong magnetic field for the case that the electron density is close to filling just one Landau sub--level of one spin projection, i.e., for filling factor…
We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
We investigate theoretically spin relaxation in heavy hole quantum dots in low external magnetic fields. We demonstrate that two-phonon processes and spin-orbit interaction are experimentally relevant and provide an explanation for the…
We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We…
We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin…
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which…
An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of…
We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot…
We present a theory for spin relaxation of electrons due to scattering off the central-cell potential of impurities in silicon. Taking into account the multivalley nature of the conduction band and the violation of translation symmetry, the…
The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field,…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to…
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…
An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…
Phonon-induced spin relaxation rates in quantum dots are studied as function of in-plane and perpendicular magnetic fields, temperature and electric field, for different dot sizes. We consider Rashba and Dresselhaus spin-orbit mixing in…