Related papers: Spin injection into a ballistic semiconductor micr…
Spin valve ultrafast spin injection devices are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized electrons from one ferromagnet to another through a…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
We report on nonlocal transport in superconductor hybrid structures, with ferromagnetic as well as normal-metal tunnel junctions attached to the superconductor. In the presence of a strong Zeeman splitting of the density of states, both…
We study the spin transport in the low temperature regime (often referred to as the precession-dominated regime) between a ferromagnetic Fermi liquid (FFL) and a normal metal metallic Fermi liquid (NFL), also known as the F/N junction,…
This work is an analytic theoretical study of a 2D semiconductor with a Fermi surface that is split by the Zeeman coupling of electron spins to an external magnetic field in the presence of electron-electron interactions. For the first…
Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A…
We theoretically study the spin susceptibility of Dirac semimetals using the linear response theory. The spin susceptibility is decomposed into an intraband contribution and an interband contribution. We obtain analytical expressions for…
Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TI), a class of quantum materials, have special gapless…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we…
Ideal Sharvin contact in a multimode regime shows the conductance $G\approx{}G_{\rm Sharvin}=g_0k_F{}W/\pi$ (with $g_0$ the conductance quantum, $k_F$ the Fermi momentum, and $W$ the contact width) accompanied by strongly suppressed…
Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magnetization in ferromagnetic elements. Whereas conventional…
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation…
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…
We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lower…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…