Related papers: Spin injection into a ballistic semiconductor micr…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
The spin-dependence of the interface resistance between ferromagnetic Fe and InAs is calculated from first-principles for specular and disordered (001) interfaces. Because of the symmetry mismatch in the minority-spin channel, the specular…
A simple tight-binding theoretical model is proposed for spin dependent, current-in-plane transport in highly coherent spin valve structures under specularity conditions. Using quantum-mechanically coherent and spatially quantized Fermi…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
The Boltzmann-Langevin equation is used to relate the shot-noise power of a mesoscopic conductor to classical transmission probabilities at the Fermi level. This semiclassical theory is applied to tunneling through n barriers in series. For…
The problem of spin injection across the interface between a non-ideal ferromagnet (less than 100% spin polarization) and a semiconductor (paramagnetic) quantum wire is examined in the presence of Rashba spin orbit coupling and an axial…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…
We consider the two-dimensional electron gas confined laterally to a narrow channel by a harmonic potential. As the Zeeman splitting matches the intersubband separation the nonlocal spin polarization develops a minimum as reported by Frolov…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
We consider a dilute fluorinated graphene nanoribbon as a spin-active element. The fluorine adatoms introduce a local spin-orbit Rashba interaction that induces spin-precession for electron passing by. In the absence of the external…
Using an atomistic spin model, we have simulated spin wave injection and propagation into antiferromagnetic IrMn from an exchange coupled CoFe layer. The spectral characteristics of the exited spin waves have a complex beating behavior…
Itinerant ferromagnetism in dilute Fermi gases is predicted to emerge at values of the gas parameter where second-order perturbation theory is not accurate enough to properly describe the system. We have revisited perturbation theory for…
The coupling of the spin of electrons to their motional state lies at the heart of recently discovered topological phases of matter. Here we create and detect spin-orbit coupling in an atomic Fermi gas, a highly controllable form of quantum…
We theoretically study nonequilibrium spin transport in a superconducting wire connected by tunnel junctions to two ferromagnetic metal wires, each of which serves as an injector or detector of spin-polarized electron current. We present a…
We present measurements of thermal and electrical spin injection in nanoscale metallic non-local spin valve (NLSV) structures. Informed by measurements of the Seebeck coefficient and thermal conductivity of representative films made using a…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field…
Theory of the ac spin injection from a ferromagnetic electrode into a normal conductor through a tunnel or Schottky contact is developed. Diffusion and relaxation of non-equilibrium spins results in a frequency dependent complex impedance…