Related papers: Quantum spin field effect transistor
We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference…
We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect…
We present a general formulation of spin-dependent transport through a clean one-dimensional interacting quantum wire or carbon nanotube, connected to non-collinear ferromagnets via tunnel junctions. We show that the low energy description…
The electron spin is a promising qubit candidate for quantum computation and quantum information. Here we propose and analyze a mechanically-induced single electron spin resonance, which amounts to a rotation of the spin about the $x$-axis…
A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the…
A novel method and nanodevice are introduced that allows to rotate the single electron spin confined in a gated electrostatic InSb nanowire quantum dot. Proposed method does not require application of any (oscillating or static) external…
The influence of the motion of a magnetic-field-induced spin-density wave (FISDW) on the quantum Hall effect in a quasi-one-dimensional conductor is studied theoretically. In the ideal case of a free FISDW, it is found that the counterflow…
All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…
We propose a spin-orbit qubit in a nanowire quantum dot on the surface of a multiferroic insulator with a cycloidal spiral magnetic order. The spiral exchange field from the multiferroic insulator causes an inhomogeneous Zeeman-like…
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by the spin--orbit coupling. Here, we propose an alternative mechanism to realize the intrinsic…
We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…
We propose a universal quantum computer based on a chain of carbon nanotube rotators where one metallic plate is attached to each rotator. The dynamical variable is the rotational angle $\phi$. The attached plate connected to ground…
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
We propose three different mechanisms for pumping spin-polarized currents in a ballistic circuit using a time-dependent magnetic field acting on an asymmetrically connected quantum ring at half filling. The first mechanism works thanks to a…
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…