Related papers: Performance of a bipolar single electron device
The electrostatic interaction between two capacitively-coupled metal double-dots is studied at low temperatures. Experiments show that when the Coulomb blockade is lifted by applying appropriate gate biases to both double-dots, the…
We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor at arbitrary…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier…
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…
We propose a remarkably simple electronic refrigerator based on the Coulomb barrier for single-electron tunneling. A fully normal single-electron transistor is voltage $V$ biased at a gate position such that tunneling through one of the…
This paper shows single electron transistor at room temperature,created on macroscopic system-the two-dimensional large area surface of our hydrogenated diamond like carbon thin film. Our results, free from the limitation of lowering the…
A superconducting tunnel junction is used to directly extract quasiparticles from one of the leads of a single-Cooper-pair-transistor. The consequent reduction in quasiparticle density causes a lower rate of quasiparticle tunneling onto the…
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal…
We analyze electron transport through relatively short coherent conductors in the presence of Coulomb interaction. We evaluate the current-voltage characteristics of such conductors taking into account the effect of an external environment.…
We have fabricated and measured superconducting single-electron transistors with Al leads and Nb islands. At bias voltages below the gap of Nb we observe clear signatures of resonant tunneling of Cooper pairs, and of Coulomb blockade of the…
We study the thermoelectric transport of a small metallic island weakly coupled to two electrodes by tunnel junctions. In the Coulomb blockade regime, in the case when the ground state of the system corresponds to an even number of…
While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed…
We investigate single-electron transport through quantum dots with negative charging energy induced by a polaronic energy shift. For weak dot-lead tunnel couplings, we demonstrate a bipolaronic blockade effect at low biases which suppresses…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…