Related papers: Effect of annealing on electron dephasing in three…
We have systematically investigated the low-temperature electron dephasing times $\tau_\phi$ in more than 40 three-dimensional polycrystalline impure metals with distinct material characteristics. In all cases, a saturation of the dephasing…
Ever since the first discoveries of the quantum-interference transport in mesoscopic systems, the electron dephasing times, $\tau_\phi$, in the concentrated AuPd alloys have been extensively measured. The samples were made from different…
Temperature dependent weak localization is measured in metallic nanowires in a previously unexplored size regime down to width $w=5$ nm. The dephasing time, $\tau_{\phi}$, shows a low temperature $T$ dependence close to quasi-1D theoretical…
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…
The low-temperature behavior of the electron phase coherence time, $\tau_{\phi}$, in mesoscopic metal wires has been a subject of controversy recently. Whereas theory predicts that $\tau_{\phi}(T)$ in narrow wires should increase as…
The behavior of the electron dephasing time near zero temperature, $\tau_\phi^0$, has recently attracted vigorous attention. This renewed interest is primarily concerned with whether $\tau_\phi^0$ should reach a finite or an infinite value…
Temperature dependence of electron dephasing time $\tau_\phi(T)$ is calculated for a disordered metal with small concentration of superconductive grains. Above the macroscopic superconducting transition line, when electrons in the metal are…
The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we…
We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…
We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with…
In this work, the effects of thermal annealing at 500 {\deg}C on aerosol-deposited $0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}$ thick films on stainless-steel substrates are investigated using two…
Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time $\tau_\phi$ can be orders of magnitude longer than the momentum relaxation…
The conduction electrons' dephasing rate, $\tau_{\phi}^{-1}$, is expected to vanish with the temperature. A very intriguing apparent saturation of this dephasing rate in several systems was recently reported at very low temperatures. The…
The observation of coherent quantum transport phenomena in metals and semiconductors is limited by the eventual loss of phase coherence of the conducting electrons. We use the weak localization effect to measure the low-temperature…
In three dimensional (3D) disordered metals, the electron-phonon (\emph{e}-ph) scattering is the sole significant inelastic process. Thus the theoretical predication concerning the electron-electron (\emph{e}-\emph{e}) scattering rate…
Studies of weak localization by scattering from vapor atoms for electrons on a liquid helium surface are reported. There are three contributions to the dephasing time. Dephasing by the motion of vapor atoms perpendicular to the surface is…
We investigated the annealing effects on the physical properties of SrFe$_2$(As$_{1-x}$P$_x$)$_2$ ($x=0.35$). The superconducting transition temperature ($T_c$) increased from 26 K to 33 K by annealing. The X-ray diffraction measurement…
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…
We consider clean metals, at finite temperature, in which the inelastic rate, $\hbar/ \tau_{ee}$, can become of the order of, or larger, than the band splitting energy. We show that in suchsystems, contrary to the common knowledge, the…
The dephasing effect of metallic gates on electrons moving in one quasi--one--dimensional diffusive wires is analyzed. The incomplete screening in this geometry implies that the effect of the gate can be described, at high energies or…