Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films
Mesoscale and Nanoscale Physics
2011-11-10 v1
Abstract
We report the observation of strong electron dephasing in a series of disordered CuGeAu thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.
Keywords
Cite
@article{arxiv.0706.2913,
title = {Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films},
author = {S. M. Huang and T. C. Lee and H. Akimoto and K. Kono and J. J. Lin},
journal= {arXiv preprint arXiv:0706.2913},
year = {2011}
}
Comments
to appear in Phys. Rev. Lett