English

Low-temperature electron dephasing time in AuPd revisited

Mesoscale and Nanoscale Physics 2007-11-14 v1 Disordered Systems and Neural Networks

Abstract

Ever since the first discoveries of the quantum-interference transport in mesoscopic systems, the electron dephasing times, τϕ\tau_\phi, in the concentrated AuPd alloys have been extensively measured. The samples were made from different sources with different compositions, prepared by different deposition methods, and various geometries (1D narrow wires, 2D thin films, and 3D thickfilms) were studied. Surprisingly, the low-temperature behavior of τϕ\tau_\phi inferred by different groups over two decades reveals a systematic correlation with the level of disorder of the sample. At low temperatures, where τϕ\tau_\phi is (nearly) independent of temperature, a scaling τϕmaxDα\tau_\phi^{\rm max} \propto D^{-\alpha} is found, where tauϕmaxtau_\phi^{\rm max} is the maximum value of τϕ\tau_\phi measured in the experiment, DD is the electron diffusion constant, and the exponent α\alpha is close to or slightly larger than 1. We address this nontrivial scaling behavior and suggest that the most possible origin for this unusual dephasing is due to dynamical structure defects, while other theoretical explanations may not be totally ruled out.

Keywords

Cite

@article{arxiv.0706.1342,
  title  = {Low-temperature electron dephasing time in AuPd revisited},
  author = {J. J. Lin and T. C. Lee and S. W. Wang},
  journal= {arXiv preprint arXiv:0706.1342},
  year   = {2007}
}
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