Related papers: Reduction Of Spin Injection Efficiency by Interfac…
We show that when one drives a charge current across noncollinear magnetic layers the two electron Coulomb scattering creates a spin flip potential at interfaces. This scattering is found when the interface potential is updated due to the…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
We study the physical properties of a half-metallic ferromagnet$\mid$superconductor (HM$\mid$S) bilayer, allowing for an arbitrary bulk pairing symmetry of the superconductor and spin-dependent processes at the interface. In particular, we…
When non-magnetic impurities are introduced in a d-wave superconductor, both thermodynamic and spectral properties are strongly affected if the impurity potential is close to the strong resonance limit. In addition to the scalar impurity…
Elucidating spin correlations in the parent compounds of high-temperature superconductors is crucial for understanding superconductivity. We used neutron scattering to study spin correlations in Li$_{1-x}$Fe$_x$ODFeSe, an insulating…
We have investigated the initial growth of Fe on GaAs(110) by means of density functional theory. In contrast to the conventionally used (001)-surface the (110)-surface does not reconstruct. Therefore, a flat interface and small diffusion…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
Recent experiments have demonstrated efficient spin transfer across layers in the van der Waals heterostructure composed of WTe2 and Fe3GeTe2, signaling a potential breakthrough in developing all-van der Waals spin-orbit torque devices.…
The enhancement of Gilbert damping observed for Ni80Fe20 (Py) films in contact with the non-magnetic metals Cu, Pd, Ta and Pt, is quantitatively reproduced using first-principles scattering theory. The "spin-pumping" theory that…
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their…
The reflection coefficient of bulk spin waves from multilayer ferromagnetic structure with periodically modulated parameters of exchange interaction, uniaxial and rhombic magnetic anisotropy and saturation magnetization is calculated with a…
The spin dependent reflection at the interface is the key element to understand the spin transport. By completely solving the scattering problem based on first principles method, we obtained the spin resolved reflectivity spectra. The…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…