Related papers: Reduction Of Spin Injection Efficiency by Interfac…
The dynamics of non-equilibrium spin accumulation generated in metals or semiconductors by rf magnetic field pumping is treated within a diffusive picture. The dc spin accumulation produced in a uniform system by a rotating applied magnetic…
The authors have investigated the possibility of utilizing spin waves for inter- and intra-chip communications, and as logic elements using both simulations and experimental techniques. Through simulations it has been shown that the decay…
A behavior of imaginary and real parts of the high-energy elastic hadron scattering amplitude is examined in the diffraction region. It is shown that the interference between Coulomb and hadronic scattering at small momentum transfers and…
The breaking of symmetry is the ground on which many physical phenomena are explained. This is important in particular for bipartite lattice structure as graphene and carbon nanotubes, where particle-hole and pseudo-spin are relevant…
We argue that spin-sensitive quasiparticle scattering may generate electron-hole imbalance in superconducting structures, such as, e.g., superconducting-normal hybrids with spin-active interfaces. We elucidate a transparent physical…
Nonequilibrium electron spin polarization is calculated under spin injection from one ferromagnet to another in magnetic junction. It is shown that the nonequilibrium spin polarization can be comparable with equilibrium one if the material…
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and…
Using background-free detection of spin-state-dependent resonance fluorescence from a single-electron charged quantum dot with an efficiency of 0:1%, we realize a single spin-photon interface where the detection of a scattered photon with…
The process of spin-charge interconversion is critical in modern spintronics. Nonetheless, experiments conducted on a wide variety of magnetic heterostructures consistently report that charge-to-spin and spin-to-charge conversion…
We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with…
We characterize the role of the spin-orbit coupling between electrons and the confining potential of the edge in nonequilibrium 2D homogeneous electronic gas. We derive a simple analytical result for the magnitude of the current induced…
Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
The electronic structure of interfaces between YBa$_2$Cu$_3$O$_6$ and SrTiO$_3$ is studied using local spin density approximation (LSDA) with intra-atomic Coulomb repulsion (LSDA+U). We find a metallic state in cuprate/titanate…
When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties.…