Related papers: Soliton Tunneling Transistor
Josephson oscillations generated by a SQUID were used to measure photon assisted tunneling in a superconducting single electron tunneling (SET) transistor. The SQUID was fabricated only a few microns from the SET transistor. The close…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
Following the experimental observation of bright matter-wave solitons [L. Khaykovich et al., Science v. 296, 1290 (2002); K. E. Strecker et al., Nature (London) v. 417, 150 (2002)], we develop a semi-phenomenological theory for soliton…
The mechanism of the magneto-Coulomb oscillation in ferromagnetic single electron transistors (SET's) is theoretically considered. Variations in the chemical potentials of the conduction electrons in the ferromagnetic island electrode and…
In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a…
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…
We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…
Inspired by new trends in atomtronics, cold atoms devices and Bose-Einstein condensate dynamics, we apply a general technique of N=4 extended Supersymmetric Quantum Mechanics to isospectral Hamiltonians with triple-well potentials, i.e.…
We study the phenomenon of macroscopic quantum tunneling (MQT) in small Josephson junctions (JJ) with an externally applied magnetic field. The latter results in the appearance of the Fraunhofer type modulation of the current density along…
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…
Solids undergoing a transition from order to disorder experience the proliferation of topological defects. The melting process generates transient quantum states. However, their dynamical nature with femtosecond lifetime hinders exploration…
The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures $T$ as small as…
Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSL). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the Mott state in monolayer 1T-NbSe2, an electronic…
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by…
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a…
We consider two-dimensional spin-orbit coupled atomic Bose-Einstein condensate in a radially-periodic potential. The system supports different types of stable self-sustained states including radially-symmetric vorticity-carrying modes with…
The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will…