Related papers: Current-Driven Magnetic Memory with Tunable Magnet…
The longitudinal transport problem (the current is applied parallel to some bias magnetic field) in type-II superconductors is analyzed theoretically. Based on analytical results for simplified configurations, and relying on numerical…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching…
The charge-memory effect, bistability and switching between charged and neutral states of a molecular junction, as observed in recent STM experiments, is considered within a minimal polaron model. We show that in the case of strong…
The magnetic properties of Mn$_{2}$Ni$_{(1+x)}$In$_{(1-x)}$ ($x$ = 0.5, 0.6, 0.7) and Mn$_{(2-y)}$Ni$_{(1.6+y)}$In$_{0.4}$ ($y$ = -0.08, -0.04, 0.04, 0.08) shape memory alloys have been studied. Magnetic interactions in the martensitic…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
We propose the interaction of two quantum memristors via capacitive and inductive coupling in feasible superconducting circuit architectures. In this composed system the input gets correlated in time, which changes the dynamic response of…
We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable…
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the…
We analyze the effects of demagnetizing fields in the magnetization hysteresis loops of type-II superconductors, by a model that allows the calculation of current and field profiles in finite cylindrically symmetric superconductors in the…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
This work introduces a fully tunable, ultra-low power unipolar memory cell inspired by the Schmitt-trigger comparator and designed in CMOS using only nine transistors. The proposed circuit operates entirely in the current domain and…
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…
Nanofluidic memristors have demonstrated great potential for neuromorphic system applications with the advantages of low energy consumption and excellent biocompatibility. Here, an effective way is developed to regulate the memristive…
Ni-Mn-In magnetic shape-memory Heusler alloys exhibit generally a large thermal hysteresis at their first-order martensitic phase transition which hinder a technological application in magnetic refrigeration. By optimizing the Cu content in…
Identifying and characterizing new magnetic systems with Co2+ ions can enhance our understanding of quantum behavior since Co2+ can host a pseudospin-1/2 magnetic ground state. Understanding the magnetic ground state and the phase diagrams…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Attractive electron correlations due to an electron-vibron interaction (EVI) can overcome the direct Coulomb repulsion of polarons in strongly deformable molecular quantum dots (MQDs). If it realizes, a switching appears in the I-V…
Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to…