Related papers: Magnetic Diode Effect in Double Barrier Tunnel Jun…
We study tunneling of the magnetic moment in a particle that has full rotational freedom. Exact energy levels are obtained and the ground-state magnetic moment is computed for a symmetric rotor. The effect of the mechanical freedom on spin…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
The theory for the quantum tunneling of nano-magnets is developed within the intermediate spin framework. Periodic magnetic effects are seen to reflect that associated with a change of flux by a single flux quantum $\Phi_{0}$. Essential are…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
We study the effects of spin-flip scatterings on the time-dependent transport properties through a magnetic quantum dot attached to normal and ferromagnetic leads. The transient spin-dynamics as well as the steady-state tunneling…
The tunneling through a ferromagnet/normal metal/ferromagnet double junction in the Coulomb blockade regime is studied, assuming that the spin relaxation time of electron in the central metallic island is sufficiently large. Using the…
Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A…
We predict that the spin-transfer, $T_{i,||}$, and field-like, $T_{i,\bot}$, components of the {\it local} spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The {\it spin-mixing} enhancement is due to the…
We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…
We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ with CoFe$_{2}$O$_{4}$ where the TMR versus applied magnetic field loop suggests a "negative coercive field". Tracing its…
We consider quantum transport and tunneling magnetoresistance (TMR) through an interacting quantum dot in the Coulomb blockade regime, attached to ferromagnetic leads. We show that there exist two kinds of anomalies of TMR, which have…
A free electron description of spin-dependent tranport in magnetic tunnel junctions with non collinear magnetizations is presented. We investigate the origin of transverse spin density in tunnelling transport and the quantum interferences…
Understanding quantum tunneling in many-body systems is crucial for advancing quantum technologies and nanoscale device design. Despite extensive studies of quantum tunneling, the role of interactions in determining directional transport…
We present experimental and theoretical studies of the magnetoresistance oscillations induced by resonance transitions of electrons between tunnel-coupled states in double quantum wells. The suppression of these oscillations with increasing…
Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS)…
We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By…
Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing…
The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal…