Related papers: Self-Assembled InAs Quantum Dots on Patterned InP …
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots,…
Ordered InAs quantum dot (QD) arrays have been obtained on pre-patterned GaAs (0 0 1) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square…
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski-Krastanow…
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…
Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum…
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…
The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and…
Achieving deterministic placement of self-assembled quantum dots (QDs) during epitaxial growth is essential for the reliable and efficient fabrication of high-quality single-photon sources and solid-state cavity quantum electrodynamics…
Quantum dots have promising properties for optoelectronic applications. They can be grown free of dislocations in highly mismatched epitaxy in the coherent Stranski-Krastanov mode. In this chapter, some thermodynamic aspects related to the…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…
We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength…
This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the…
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…
GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…