Related papers: Interaction effects and the metallic phase in p-Si…
In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective…
We consider interaction effects in a granular normal metal at not very low temperatures. Assuming that all weak localization effects are suppressed by the temperature we replace the initial Hamiltonian by a proper functional of phases and…
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the…
Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The…
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
Motivated by recent experimental work on magnetic properties of Si-MOSFETs, we report a calculation of magnetisation and susceptibility of electrons in an inversion layer, taking into account the co-ordinate dependence of electron wave…
We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the…
We measure magnetic field dependence of the Hall angle in a metallic ferromagnetic nanomagnet with stable local magnetic moments where the adopted mechanisms of Hall effect predict linear plus a constant dependence on the external field…
Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier…
The rich variety of phase transitions observed in the strained p-SiGe system are considered and compared. It is shown that the integer quantum Hall effect transitions, the Hall insulating transition and the re-entrant transition into an…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
The interaction between the itinerant spins in metals and localized spins in magnetic insulators thus far has only been explored in collinear spin systems, such as garnets. Here, we report the spin-Hall magnetoresistance (SMR) sensitive to…
The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated…
We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…