Related papers: Metal-Insulator Transitions in Interacting Disorde…
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
The electrical conductivity of disordered insulator-conductor composites have been studied for more than thirty years. In spite of this some properties of dc bulk conductivity of composites still remain incompletely understood. We present a…
Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…
The effect of Cooperons on metal-insulator transitions (MIT) in disordered interacting electronic systems is studied. It is argued that previous results which concluded that Cooperons are qualitatively unimportant near the MIT might not be…
Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as \sigma (n_s,T)=\sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier…
The role of orbital ordering on metal-insulator transition of transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap on the orbital…
Metal-insulator transition in anisotropic disordered Anderson model with both topological and diagonal disorder is investigated numerically. For four sets of the model parameters we found the critical disorder and the critical exponent and…
Recent experiments on the two dimensional electron gas in various semiconductor devices have revealed an unexpected metal-insulator transition and have challenged the previously held assumption that there is no such transition in two…
The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied…
Functionalities in crystalline materials are determined by 3-dimensional collective interactions of atoms. The confinement of dimensionality in condensed matter provides an exotic research direction to understand the interaction of atoms,…
Motivated by recent experimental data on thin film superconductors and oxide interfaces we propose a random-resistor network apt to describe the occurrence of a metal-superconductor transition in a two-dimensional electron system with…
Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transitions emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical…
The doping-induced metal-insulator transition in two-chain systems of correlated fermions is studied using a solvable limit of the t-J model and the fact that various strong- and weak-coupling limits of the two-chain model are in the same…
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their…
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…
Turning a pristine Mott insulator into a correlated metal by chemical doping is a common procedure in strongly correlated materials physics, e.g. underlying the phenomenology of high-$T_c$ cuprates. The ruthenate bilayer compound…
The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…
We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a…
We review the latest developments in the field of the metal-insulator transition in strongly-correlated two-dimensional electron systems. Particular attention is given to recent discoveries of a sliding quantum electron solid and…
A Metal-Disordered Mott insulator-Metal heterostructure is studied at half-fiiling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we…