Anisotropic Metal-Insulator Transition in Epitaxial Thin Films
Strongly Correlated Electrons
2009-11-10 v1 Mesoscale and Nanoscale Physics
Abstract
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their elementary excitations possess coherent wave-like properties along the normal axis, and show an incoherent behavior in-plane. The development of such an anisotropic coherence is most likely related to Coulomb interaction between localized and delocalized thin film electronic states - 2D Kondo screening.
Keywords
Cite
@article{arxiv.cond-mat/0311081,
title = {Anisotropic Metal-Insulator Transition in Epitaxial Thin Films},
author = {I. B. Altfeder and X. Liang and D. M. Chen and V. Narayanamurti},
journal= {arXiv preprint arXiv:cond-mat/0311081},
year = {2009}
}
Comments
4 figures, submitted to PRL