Related papers: Pinholes May Mimic Tunneling
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by {\AA}kerman and collaborators, however, has demonstrated…
In many composites the electrical transport takes place only by tunneling between isolated particles. For a long time it was quite a puzzle how, in spite of the incompatibility of tunneling and percolation networks, these composites conform…
In the development of the first generation of sensors and memory chips based on spin-dependent tunneling through a thin trilayer, it has become clear that pinhole defects can have a deleterious effect on magnetoresistance. However, current…
Classical percolation models predict the metal-insulator transition and the onset of the long-range ferromagnetic order at the same topological continuity threshold. We tested this prediction in thin films of ferromagnetic CoPd and found a…
We suggest a theory of internal coherent tunneling in the pseudogap region where the applied voltage is below the free electron gap. We consider quasi 1D systems where the gap is originated by a lattice dimerization like in polyacethylene,…
Startling magnetic effects on the spontaneous polarization echo in some silicate glasses at low and ultra-low temperatures have been reported in the last decade or so. Though some progress in search of an explanation has been made by…
We present a simple model of composite particle tunnelling through a rectangular potential barrier in presence of magnetic field. The exact numerical solution of the problem is provided and the applicability to real physical situations is…
The influence of ballistic channels superimposed on tunneling conduction channels in magnetic tunnel junctions has been studied in a manganese oxide based tunneling device. Inversion of magnetoresistance has been observed in magnetic tunnel…
We analyse the optical (or microwave) tunnelling properties of electromagnetic waves passing through thin films presenting a specific index profile providing a cut-off frequency, when they are used below this frequency. We show that…
Using the closed-time path integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
We report results from Monte Carlo simulations of systems of magnetic dipoles that relax through quantum tunneling, much as Fe_8 crystals at very low temperature.For short times, a hole develops in suitably defined magnetic field…
Quantum tunneling from a thin wire or a thin film through a static potential barrier in a zero magnetic field is studied. The wire or the film should satisfy a condition of transverse quantization of levels and be inhomogeneous. Depending…
We provide a characterization of tunneling between coupled topological insulators in 2D and 3D under the influence of a ferromagnetic layer. We explore conditions for such systems to exhibit integer quantum Hall physics and localized…
The design of spin-transport based devices such as magnon transistors or spin valves will require multilayer systems composed of different magnetic materials with different physical properties. Such layered structures can show various…
Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
We model the charge, spin, and heat currents in ferromagnetic metal$|$normal metal$|$normal metal trilayer structures in the two current model, taking into account bulk and interface thermoelectric properties as well as Joule heating.…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…