Related papers: Shallow Coulomb Gap and Weak Level-Level Correlati…
We calculate the effect of Coulomb interactions on the average density of states nu (omega) of two-dimensional disordered electrons. It is shown that for weak disorder the most singular terms in the perturbative expansion of nu (omega) can…
We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a…
It is shown that the voltage dependence of the tunneling conductance between two lightly doped semiconductors, which are separated by an large area tunneling barrier, can reveal the high energy part of the Coulomb gap if the barrier is…
We found analytical solution for the time evolution of localized electron density in a system of two coupled single-level quantum dots (QDs) connected with continuous spectrum states in the presence of Coulomb interaction. This solution…
We use a generalized master equation (GME) to describe the nonequilibrium magnetotransport of interacting electrons through a broad finite quantum wire with an embedded ring structure. The finite quantum wire is weakly coupled to two broad…
We introduce a new paradigm for finite and infinite strict-one-dimensional uniform electron gases. In this model, $n$ electrons are confined to a ring and interact via a bare Coulomb operator. In the high-density limit (small-$r_s$, where…
By splitting the Coulomb interaction into long-range and short-range components, we decompose the energy of a quantum electronic system into long-range and short-range contributions. We show that the long-range part of the energy can be…
We analyze a decomposition of the Coulomb electron-electron interaction into a long-range and a short-range part in the framework of density functional theory, deriving some scaling relations and the corresponding virial theorem. We study…
The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…
We study a two-dimensional system of two Coulombically interacting electrons in an external harmonic confining potential. More precisely, we present calculations for the singlet ground-state of the system. We explain the nature of the…
We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $\rho^{(d)}(\epsilon,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature…
We study the unscreened Coulomb interaction in a one-dimensional electron system at low-energy. We use renormalization group methods and a GW approximation, in order to analyze the model. This yields both a strong wavefunction…
We study the Coulomb drag effect in double layer electronic systems with local tunneling links. The possibility of tunneling between the layers leads to a pronounced exchange contribution to the transconductance, which is negative and…
In this work we investigate the phenomena associated with the new thresholds in the spectrum of excitations arising when different one-dimensional strongly interacting systems are voltage biased and weakly coupled by tunneling. We develop…
We obtain and analyze the effect of electron-electron Coulomb interaction on the time dependent current flowing through a mesoscopic system connected to biased semi-infinite leads. We assume the contact is gradually switched on in time and…
Interplay between changes of energy levels and tunneling amplitudes caused by localized electrons on-site Coulomb interaction depending on non-equilibrium electron filling numbers is analyzed. Specific features of local tunneling…
We study the influence of electron-electron interactions on the electronic properties of disordered materials. In particular, we consider the insulating side of a metal-insulator transition where screening breaks down and the…
Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to…
A simple approximate expression in real and reciprocal spaces is given for the static exchange-correlation kernel of a uniform electron gas interacting with the long-range part only of the Coulomb interaction. This expression interpolates…
The tunneling into the {\em bulk} of a 2D electron system (2DES) in strong magnetic field is studied near the integer quantum Hall transitions. We present a nonperturbative calculation of the tunneling density of states (TDOS) for both…