Tunneling into the localized phase near Anderson transitions with Coulomb interaction
Abstract
We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a crossover to a soft Coulomb gap at low energies. We demonstrate that the single-particle excitations experience a localization transition (which belongs to the noninteracting universality class) at an energy . The mobility edge scales with the distance from the interacting critical point according to , where and are the localization-length and the dynamical critical exponents. Local TDOS shows strong fluctuations and long-range correlations which reflect the multifractality associated with interacting and noninteracting fixed points as well the localization of low-energy excitations.
Keywords
Cite
@article{arxiv.1307.5811,
title = {Tunneling into the localized phase near Anderson transitions with Coulomb interaction},
author = {I. S. Burmistrov and I. V. Gornyi and A. D. Mirlin},
journal= {arXiv preprint arXiv:1307.5811},
year = {2014}
}
Comments
14 pages, 5 figures; to appear in Physical Review B