English

Tunneling into the localized phase near Anderson transitions with Coulomb interaction

Mesoscale and Nanoscale Physics 2014-01-28 v3 Strongly Correlated Electrons

Abstract

We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a crossover to a soft Coulomb gap Δ\Delta at low energies. We demonstrate that the single-particle excitations experience a localization transition (which belongs to the noninteracting universality class) at an energy E=±EcE=\pm E_c. The mobility edge EcE_c scales with the distance μcμ\mu_c-\mu from the interacting critical point according to Ec(μcμ)νzE_c\propto (\mu_c-\mu)^{\nu z}, where ν\nu and zz are the localization-length and the dynamical critical exponents. Local TDOS shows strong fluctuations and long-range correlations which reflect the multifractality associated with interacting and noninteracting fixed points as well the localization of low-energy excitations.

Keywords

Cite

@article{arxiv.1307.5811,
  title  = {Tunneling into the localized phase near Anderson transitions with Coulomb interaction},
  author = {I. S. Burmistrov and I. V. Gornyi and A. D. Mirlin},
  journal= {arXiv preprint arXiv:1307.5811},
  year   = {2014}
}

Comments

14 pages, 5 figures; to appear in Physical Review B