Related papers: Proximity effect in planar TiN-Silicon junctions
Sn is a well-known classical superconductor on the border between type I and type II with critical temperature of 3.722K and critical field of 0.031T. We show by means of specific heat and electric magneto-transport data that its critical…
Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…
We consider a planar superconducting-normal-metal (SN) junction with both inelastic and spin-flip scattering processes present. In the diffusive limit, we use a one-dimensional formulation of the Usadel equation to compute the…
We theoretically study the properties of thermal conductance in a normal-insulator-superconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential…
In the following paper we investigate the critical temperature $T_c$ behavior in the two-dimensional S/TI (S denotes superconductor and TI - topological insulator) junction with a proximity induced in-plane helical magnetization in the TI…
We present a study of the superconducting energy gap performed with point contact spectroscopy in a single crystal of the superconductor Zr0:97V0:03B2. We determined the size and evolution with temperature of the energy gap, the transition…
The electrical conductivity of suspended graphene has recently been measured for the first time, and found to behave as \sigma ~ \sqrt{|n|} as expected for Dirac quasiparticles at large carrier density. The charge inhomogeneity is strongly…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…
IVC characteristics as well as their derivatives were recorded for contacts on the base of CeNiSn, known as Kondo semiconductor, in the metallic and the tunnelling regime at temperatures between 0.1-8 K and in magnetic fields up to 8 T…
Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…
We have researched the effect of the zirconium deformation by the extension at the temperature of 4.2 K, with the subsequent heating up to the room temperature of 300 K, on both the zirconium crystal grating structure and the magnitude of…
We have performed powder neutron diffraction on the new superconductor, CeNi$_{0.8}$Bi$_2$ with a superconducting transtion temperature $T_\textrm{c} \sim$ 4.2 K. The structural parameters of this compound at room temperature are determined…
The resistivity of the two dimensional electron gas that forms at the interface of strontium titanate with various oxides is sensitive to irradiation with visible light. In this letter we present data on the interface between the band gap…
Much of the focus of modern condensed matter physics concerns control of quantum phases with examples that include flat band superconductivity in graphene bilayers, the interplay of magnetism and ferroelectricity, and induction of…
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate…
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the…
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related…
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…
We present the findings of the superconductivity observed in the silicon nanostructures prepared by short time diffusion of boron on the n-type Si(100) surface. These Si-based nanostructures represent the p-type ultra-narrow self-assembled…