Related papers: Proximity effect in planar TiN-Silicon junctions
Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical…
Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure…
We present radio-frequency thermometry based on a tunnel junction between a superconductor and proximitized normal metal. It allows operation in a wide range of biasing conditions. We demonstrate that the standard finite-bias quasiparticle…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
We have performed temperature dependent tunneling spectroscopy on an impurity-free surface area of a LiFeAs single crystal. Our data reveal a highly unusual temperature evolution of superconductivity: at $T_c^*=18$~K a partial…
We study the perpendicular transport characteristics of small superconductor/ferromagnetic insulator/superconductor (YBa$_2$Cu$_3$O$_{7-x}$/LaMnO$_{3+\delta}$/YBa$_2$Cu$_3$O$_{7-x}$) tunnel junctions. At a large bias voltage $V\sim 1$ V we…
A system of two coplanar superconducting films seamlessly connected by a bridge is studied. We observe two distinct resistive transitions as the temperature is reduced. The first one, occurring in the films, shows some properties of the…
Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the…
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure…
High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…
The electric transport properties of superconducting FeSe0.3Te0.7/Au c-axis (S/N) junctions, fabricated by using Pulsed Laser Deposition technique, have been investigated in the temperature range of 2 K to the superconducting transition…
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced…
Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is…
Ternary silicides MI(MII0.5, Si0.5)2 (MI=Sr and Ba, MII=Al and Ga) were prepared by Ar arc melting. Powder X-ray diffraction indicates that they have the AlB2-type structure, in which Si and MII atoms are arranged in honeycomb layers and MI…
052<p type="texpara" tag="Body Text" et="abstract" >The superconducting proximity effect is measured in sandwiches of thin Pb films and the alkali metals Cs, Rb, K and Na. The $T_{c}$-dependence provides information about the interface…
We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…
We present a study of the superconducting properties of the candidate topological superconductor Ti_(3)Sb. Electrical transport measurements show zero resistance with a T_(c,onset) of ~ 5.9 K with a transition width {\Delta}T_c~ 0.6 K. The…
We study transport across either a potential or a magnetic barrier which is placed on the top surface of a three-dimensional thin topological insulator (TI). For such thin TIs, the top and bottom surfaces interact via a coupling $\lambda$…