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The optimization of resistive anode for two dimensional imaging detectors which consists of a series of high resistive square pads surrounding by low resistive strips has been studied by both numerical simulations and experimental tests. It…
Solid state LiDAR systems traditionally rely on costly active components for efficient beam scanning. In this study, we propose a cost-effective, purely passive steering approach using apodized slanted grating couplers. Through apodization,…
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…
CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a…
We demonstrate, for the first time, sputtered PZT as a platform for the development of Si-based photonic devices such as rings, MZI, and electro-optic modulators. We report the optimization of PZT on MgO(002) substrate to obtain highly…
This paper presents an investigation of organic LED extraction efficiency enhancement using a low refractive index scattering layer. A scattering model is developed based on rigorous electromagnetic modelling techniques. The model accounts…
Terahertz (THz) polarization detection provides critical insights into material properties but faces a fundamental constraint upon miniaturization: subwavelength metallic electrodes induce strong localization and distortion of the incident…
Bent monolithic active pixel sensors are the basis for the planned fully cylindrical ultra low material budget tracking detector ITS3 of the ALICE experiment. This paper presents results from testbeam campaigns using high-energy particles…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
In this work, we propose a strategy to sense quantitatively and specifically cations, out of a single organic electrochemical transistor (OECT) device exposed to an electrolyte. From the systematic study of six different chloride salts over…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel…
The performance of solution-processed organic light emitting diodes (OLEDs) is often limited by non-uniform contacts. In this work, we introduce Ni-containing solution-processed metal oxide (MO) interfacial layers inserted between indium…
We report on the calibration of an argon/isobutane (97.7 %/2.3 %)-filled GridPix detector with soft X-rays (277 eV to 8 keV) using the variable energy X-ray source of the CAST Detector Lab at CERN. We study the linearity and energy…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
Silicon carbide detectors exhibit good detection performance such as fast time resolution, high radiation tolerances, high breakdown voltage and low temperature sensitivity and have been studied for detection applications. Meanwhile,…
The discovery of transparent electrodes led to the development of optoelectronic devices such as OLEDs, LCDs, touchscreens, IR sensors, etc. Since ITO has many drawbacks in respect of its production cost and limited transparency in IR,…
We report on the development and extensive characterization of co-sputtered tantala-zirconia thin films, with the goal to decrease coating Brownian noise in present and future gravitational-wave detectors. We tested a variety of sputtering…
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high…
Multiple application-specific integrated circuits (ASIC) are required for the detectors if their readout channels are larger than that of ASIC channels. For a system with such a readout scheme, there is a need to configure channels among…