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DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…

In this paper, we consider the uplink channel estimation phase and downlink data transmission phase of cell-free millimeter wave (mmWave) massive multiple-input multiple-output (MIMO) systems with low-capacity fronthaul links and…

We present fully kinetic two-dimensional, three-velocity-component (2D3V) PIConGPU simulations of a three-beam direct-drive interaction with a 15 $\mu$m solid-density cryogenic hydrogen cylinder, establishing a predictive numerical baseline…

A quantum chemistry study of the first singlet (S1) and triplet (T1) excited states of phenylsulfonyl-carbazole compounds, proposed as useful thermally activated delayed fluorescence (TADF) emitters for organic light emitting diode (OLED)…

Power consumption has become the major concern in neural network accelerators for edge devices. The novel non-volatile-memory (NVM) based computing-in-memory (CIM) architecture has shown great potential for better energy efficiency.…

Self-attention in Transformers generates dynamic operands that force conventional Compute-in-Memory (CIM) accelerators into costly non-volatile memory (NVM) reprogramming cycles, degrading throughput and stressing device endurance. Existing…

HfO$_2$-based ferroelectrics are one of the most actively developed functional materials for memory devices. However, in HfO$_2$-based ferroelectric devices, dielectric breakdown is a main failure mechanism during repeated polarization…

Training billion-parameter models requires distributing model states across GPUs using fully sharded data parallel (i.e., ZeRO-3). While ZeRO-3 succeeds on clusters with high-bandwidth NVLink and InfiniBand interconnects, researchers with…

We present a first-principle numerical study of charge transport in a realistic two-dimensional tight-binding model of organic molecular semiconductors. We use the Hybrid Monte Carlo (HMC) algorithm to simulate the full quantum dynamics of…

The paper presents simulation study of thin ferroelectrics (Si doped HfO2, PZT) PGP FDSOI NCFETs at circuit level for high performance, low VDD low-power digital circuits. The baseline PGP FDSOI MOSFET has 20 nm metal gate length with…

Compute-in-memory (CIM) accelerators for spiking neural networks (SNNs) are promising solutions to enable $\mu$s-level inference latency and ultra-low energy in edge vision applications. Yet, their current lack of flexibility at both the…

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…

High-fidelity quantum simulations demand hardware-software co-design architectures, which are crucial for adapting to complex problems such as strongly correlated dynamics in condensed matter. By leveraging co-design strategies, we can…

Finding distinct signatures of a quantum spin liquid (QSL) is an ongoing quest in condensed matter physics, invariably complicated by the presence of disorder in real materials. In this regard the 2D Kagome system…

We propose a measurement-based FTQC (MB-FTQC) architecture for high-connectivity platforms such as trapped ions and neutral atoms. The key idea is to use verified logical ancillas combined with Knill's error-correcting teleportation,…

We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…

Compute-in-memory (CIM) techniques are widely employed in energy-efficient artificial intelligent (AI) processors. They alleviate power and latency bottlenecks caused by extensive data movements between compute and storage units. To extend…

In this paper, we propose an encoder-decoder neural architecture (called Channelformer) to achieve improved channel estimation for orthogonal frequency-division multiplexing (OFDM) waveforms in downlink scenarios. The self-attention…

Anticipating the important role of tree level FCNC processes in the indirect search for new physics at distance scales as short as 10^-19-10^-21 m, we present complete NLO QCD corrections to tree level Delta F=2 processes mediated by heavy…

In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field…