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The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we…
Objective. This study investigates the best achievable performance of a brain-dedicated PET system with high resolution and sensitivity by evaluating different detector configurations, while maintaining a practical system design suitable…
A modeling of the normal state of the p-doped high-temperature superconductors (HTSC's) is presented. This is achieved starting from a more conventional metallic phase for optimal- and overdoping and passing via the underdoped to the…
The Belle II experiment at the SuperKEKB collider is preparing for an upgrade after 2027-2028 to handle higher luminosity and increased background rates. A Radio Frequency System-on-Chip (RFSoC) has been identified as a potential candidate…
Non-volatile memories (NVMs) offer negligible leakage power consumption, high integration density, and data retention, but their non-volatility also raises the risk of data exposure. Conventional encryption techniques such as the Advanced…
Carrier Frequency Offset (CFO) estimation in Orthogonal Frequency Division Multiplexing (OFDM) systems faces significant performance degradation across heterogeneous software-defined radio (SDR) platforms due to uncalibrated hardware…
This paper introduces the Frequency-Domain Differential Corrector (FDDC), a model-agnostic approach for constructing quasi-periodic orbits (QPOs) across a range of dynamical regimes. In contrast to existing methods that explicitly enforce…
Complex-valued signals encode both amplitude and phase, yet most deep models treat attention as real-valued correlation, overlooking interference effects. We introduce the Holographic Transformer, a physics-inspired architecture that…
Hafnium dioxide (HfO2) is a promising ferroelectric (FE) material for achieving high-density nonvolatile memory and neuromorphic computing, due to its compatibility with the mainstream integrated circuit technology and the surprisingly…
Transformer-based deep learning models are increasingly deployed on energy, and DRAM bandwidth constrained devices such as laptops and gaming consoles, which presents significant challenges in meeting the latency requirements of the models.…
Serving large language models (LLMs) at scale necessitates efficient key-value (KV) cache management. KV caches can be reused across conversation turns via shared-prefix prompts that are common in iterative code editing and chat. However,…
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
We propose a novel attention mechanism, named Cog Attention, that enables attention weights to be negative for enhanced expressiveness, which stems from two key factors: (1) Cog Attention enhances parameter flexibility. For example, unlike…
This paper presents a Computational Fluid Dynamics (CFD) analysis of a wave energy device called the Hull Reservoir Wave Energy Converter (HRWEC). The device consists of a floating hull and a flap connected to the shaft of power take-off…
In this study, we evaluate multi-configurational trial wave function protocols for phaseless auxiliary field quantum Monte Carlo (ph-AFQMC) on transition metal containing systems. First, we benchmark vertical ionization potentials for 22 3d…
This paper presents a flexible thin-film underwater transducer based on a mesoporous PVDF membrane embedded with piezoelectrical-actuated microdomes. To enhance piezoelectric performance, ZnO nanoparticles were used as a sacrificial…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…