Related papers: Nonvolatile Charge-Domain Attention with HZO Ferro…

A novel defect control approach based on laminated HfO$_2$/ZrO$_2$ with multifunctional TiN/Mo/TiOxNy electrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface…

In this work, a 3.5 GS/s voltage-controlled oscillator (VCO) analog-to-digital converter (ADC) using multi-stage noise shaping (MASH) is presented. This 28nm CMOS ADC achieves second-order noise shaping in an easily-scalable, open-loop…

The energy efficiency of analog computing-in-memory (ACIM) accelerator for recurrent neural networks, particularly long short-term memory (LSTM) network, is limited by the high proportion of nonlinear (NL) operations typically executed…

This paper reports a synergistic approach of READ and WRITE optimization by deploying a high-precision digital computation unit along with a low-precision ferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplication block for…

Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques.…

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…

We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…

Hyperdimensional (HD) computing involves encoding of baseline information into large hypervectors and repeated Boolean operations to generate the output class hypervectors which are stored in an associative memory. The classification task…

Analog Content Addressable Memories (aCAMs) have proven useful for associative in-memory computing applications like Decision Trees, Finite State Machines, and Hyper-dimensional Computing. While non-volatile implementations using FeFETs and…

Equivalent Circuit Model(ECM)has been widelyused in battery modeling and state estimation because of itssimplicity, stability and interpretability.However, ECM maygenerate large estimation errors in extreme working conditionssuch as…

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel…

Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme…

This paper introduces the first tunable ferroelectric capacitor (FeCAP) based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130nm Ferroelectric RAM (FeRAM) technology. An array of FeCAPs in this complementary…

In this paper, the zero-forcing (ZF) precoder with max-min power allocation is proposed for cell-free millimeter wave (mmWave) massive multiple-input multiple-output (MIMO) systems using low-resolution digital-to-analog converters (DACs)…

Time-to-Digital Converters (TDCs) are a crucial tool in a wide array of fields, in particular for quantum communication, where time taggers performance can severely affect the quality of the entire application. Nowadays, FPGA-based TDCs…

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the…

Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being…

Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of…