Related papers: Nonvolatile Charge-Domain Attention with HZO Ferro…
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated…
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…
Currently, one main research line in designing a more efficient vision transformer is reducing the computational cost of self attention modules by adopting sparse attention or using local attention windows. In contrast, we propose a…
Long-sequence video diffusion transformers hit a quadratic self-attention cost that dominates runtime and memory for very long token sequences. Most efficient attention methods use one approximation everywhere, yet video features are…
Ferroelectric non-volatile capacitance-based memories enable non-destructive readout and low-power in-memory computing with 3D stacking potential. However, their limited memory window (1-10 fF/{\mu}m) requires material-device-circuit…
CMOS-MEMS resonators seamlessly integrated in advanced integrated circuit (IC) technology have the unique capability to enable unprecedented integration of stable frequency references, acoustic spectral processors, and physical sensors.…
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are…
Hyperdimensional computing (HDC) is a brain-inspired computing paradigm based on high-dimensional holistic representations of vectors. It recently gained attention for embedded smart sensing due to its inherent error-resiliency and…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However,…
Feature coding for machines (FCM) is a lossy compression paradigm for split-inference. The transmitter encodes the outputs of the first part of a neural network before sending them to the receiver for completing the inference. Practical FCM…
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage…
Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…
This paper presents a hybrid switched-capacitor converter (HSCC) with a novel multi-mode modulation (3M) scheme for wide-range voltage regulation in 48-V automotive power systems. By introducing a three-state operating sequence beyond the…
KV cache quantization reduces the memory cost of long-context LLM inference, but introduces approximation error that is typically validated only empirically. Existing systems rely on average-case robustness, with no mechanism to detect or…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
We demonstrate high accuracy classification for handwritten digits from the MNIST dataset ($\sim$98.00$\%$) and RGB images from the CIFAR-10 dataset ($\sim$86.80$\%$) by using resistive memories based on a 2D van-der-Waals semiconductor:…
Variational quantum circuits (VQCs) are a leading approach to quantum machine learning on near-term devices, yet it remains unclear which circuit architecture yields the best accuracy-parameter trade-off on classical tabular data. We…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…