Related papers: Nonvolatile Charge-Domain Attention with HZO Ferro…
The non-destructive capacitance read-out of ferroelectric capacitors (FeCaps) based on doped HfO$_2$ metal-ferroelectric-metal (MFM) structures offers the potential for low-power and highly scalable crossbar arrays. This is due to a number…
Processing long-context inputs with large language models presents a significant challenge due to the enormous memory requirements of the Key-Value (KV) cache during inference. Existing KV cache compression methods exhibit noticeable…
A major challenge in the molecular simulation of electric double layer capacitors (EDLCs) is the choice of an appropriate model for the electrode. Typically, in such simulations the electrode surface is modeled using a uniform fixed charge…
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with…
Charge-domain compute-in-memory (CIM) SRAMs have recently become an enticing compromise between computing efficiency and accuracy to process sub-8b convolutional neural networks (CNNs) at the edge. Yet, they commonly make use of a fixed…
The attention mechanism is a key computing kernel of Transformers, calculating pairwise correlations across the entire input sequence. The computing complexity and frequent memory access in computing self-attention put a huge burden on the…
Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-generation memory paradigms. Recently, BEOL-compatible…
A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind. Non-volatile storage of weights which eliminates…
Numerous applications in quantum and classical optics require scalable, high-speed modulators that cover visible-NIR wavelengths with low footprint, drive voltage (V) and power dissipation. A critical figure of merit for electro-optic (EO)…
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…
Single ferroelectric memcapacitor-based time-domain (TD) content-addressable memory (CAM) is proposed and experimentally demonstrated for high reliability and density. The proposed TD CAM features the symmetric capacitance-voltage…
This paper presents a non-Hermitian physics-inspired voltage-controlled oscillator (VCO) topology, which is termed parity-time-symmetric topology. The VCO consists of two coupled inductor-capacitor (LC) cores with a balanced gain and loss…
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation…
In this paper we propose and evaluate the performance of a 3D-embedded neuromorphic computation block based on indium gallium zinc oxide ($\alpha$-IGZO) based nanosheet transistor and bi-layer resistive memory devices. We have fabricated…
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…
This work presents the design and analysis of a sixth-order triple-coupled transformer-based tank, enabling third-harmonic expansion for mmWave VCOs. Unlike conventional fourth-order tanks, the proposed tank inherently supports three…
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here,…
The nitrogen-vacancy (NV) center in diamond exists in different charge states with distinct photoluminescence properties, which are sensitive to the nanoscale electrochemical environment. Hence, the NV charge state is emerging as a powerful…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
This paper presents a low-area and low-power consumption CMOS differential current controlled oscillator (CCO) for neuromorphic applications. The oscillation frequency is improved over the conventional one by reducing the number of MOS…