Related papers: Development of Segmented 4H-SiC LGADs

Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode…

The proposed high-luminosity high-energy Electron-Ion Collider (EIC) will provide a clean environment to precisely study several fundamental questions in the fields of high-energy and nuclear physics . A low material budget and high…

We present a multi-chroic kinetic inductance detector (KID) pixel design integrated with a broadband hierarchical phased-array antenna. Each low-frequency pixel consists of four high-frequency pixels. Four passbands are designed from 125 to…

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point,…

To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high…

We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x…

In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon…

Superconducting radiation detectors typically exhibit detection and single photon sensitivity limited to the mid infrared wavelength range. Extending their detection capabilities into the far infrared range (>10 um) requires careful…

We have developed Lumped Element Kinetic Inductance Detectors (LEKID) sensitive in the frequency band from 80 to 120~GHz. In this work, we take advantage of the so-called proximity effect to reduce the superconducting gap of Aluminium,…

4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge…

Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors,…

The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to…

In the planned or considered upgrades of LHCb, ALICE and Belle II experiments, the Ring imaging Cherenkov (RICH) detectors will have to be improved in order to function at increased beam interaction density. The photodetectors used in…

We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at the Max-Planck-Institute as part of the Medium Energy Gamma-ray Astronomy (MEGA) project. The detectors are designed to…

It is foreseen to significantly increase the luminosity of the LHC in order to harvest the maximum physics potential. Especially the Phase-II-Upgrade foreseen for 2023 will mean unprecedented radiation levels, significantly beyond the…

Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband…

We present measurements of AC-LGADs performed at the Fermilab's test beam facility using 120 GeV protons. We studied the performance of various strip and pad AC-LGAD sensors that were produced by BNL and HPK. The measurements are performed…

A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…

A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…

A Semiconductor Multiple-Compton Telescope (SMCT) is being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of the SMCT…