Related papers: Radio-frequency reflectometry in silicon carbide l…
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large…
Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for…
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices…
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
Radio-frequency (RF) reflectometry is implemented in hybrid semiconductor-superconductor nanowire systems designed to probe Majorana zero modes. Two approaches are presented. In the first, hybrid nanowire-based devices are part of a…
Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most…
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the…
Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust…
We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device.…
Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such…
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P…
Quantum computing has emerged as a promising technology for next-generation information processing, utilizing semiconductor quantum dots as one of the candidates for quantum bits. Radio-frequency (rf) reflectometry plays an important role…
We introduce a multimode superconducting inductor architecture that enables radio-frequency reflectometry at multiple discrete frequencies up to 2 GHz, addressing limitations of conventional single-mode designs. The spiral inductor's…
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement…