Related papers: Singlet-triplet oscillations in multivalley Si dou…
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation…
We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in…
We determine the spin exchange coupling J between two electrons located in two vertically tunnel-coupled quantum dots, and its variation when magnetic (B) and electric (E) fields (both in-plane and perpendicular) are applied. We predict a…
Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…
We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an…
We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We…
Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multi-valley materials like $n$-doped…
The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy…
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot,…
We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots,…
We characterize numerically and analytically the signatures of the spin-orbit interaction in a two-electron GaAs double quantum dot in the presence of an external magnetic field. In particular, we obtain the return probability of the…
We demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array. Starting with two electrons in a spin-singlet state in the first dot, we shuttle one electron over to either the second, third or fourth dot. We…
We use numerically exact diagonalization to calculate the spin-orbit and phonon-induced triplet-singlet relaxation rate in a two-electron quantum dot exposed to a tilted magnetic field. Our scheme includes a three-dimensional description of…
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings…
A complete numerical description of the charge and spin dynamics of a two-electron system confined in narrow nanowire quantum dots under oscillating electric field is presented in the context of recent electric dipole spin resonance…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…