Related papers: Nonvolatile single-ion memory with picosecond swit…
Non-volatile, byte addressable, memory technology with performance close to main memory promises to revolutionise computing systems in the near future. Such memory technology provides the potential for extremely large memory regions (i.e. >…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
Hydroxide ion transport in anion-exchange membranes fundamentally limits the efficiency of alkaline water electrolysis for green hydrogen production, yet the atomic-scale transport mechanisms remain poorly understood due to the…
Ensuring safety in high-speed autonomous vehicles requires rapid control loops and tightly bounded delays from perception to actuation. Many open-source autonomy systems rely on ROS 2 middleware; when multiple sensor and control nodes share…
As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…
Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…
Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that provides better endurance, write energy and performance than traditional NVM technologies such as Flash. In embedded application such as…
High performance computing (HPC) applications have a high requirement on storage speed and capacity. Non-volatile memory is a promising technology to replace traditional storage devices to improve HPC performance. Earlier in 2017, Intel and…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
In this work, we propose a novel differential photonic static random access memory (pSRAM) bitcell design using fabrication-friendly photonic components. The proposed pSRAM overcomes the key limitations of traditional electrical SRAMs,…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Single photons are the flying qubits of choice for distributing entanglement in a quantum internet. Quantum memories embedded in quantum repeaters are crucial to overcome transmission loss and enhance the rate of quantum communication. A…
We present an alternative approach for interconnecting trapped ion processor nodes by a deterministic single ion transfer out of the trap, into a free space trajectory, followed by recapture in the trapping potential. Our experimental…
Light storage, the controlled and reversible mapping of photons onto long-lived states of matter [1], enables memory capability in optical quantum networks [2-6]. Prominent storage media are warm alkali gases due to their strong optical…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and…
We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as…
We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy…
We explore how to improve the energy performance of battery-less Internet of Things (IoT) devices at the cost of a reduction in the quality of the output. Battery-less IoT devices are extremely resource-constrained energy-harvesting…