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We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and…

The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…

Neurons with internal memory have been proposed for biological and bio-inspired neural networks, adding interesting functionality. We propose and model a nanoscale optoelectronic neural node with charge-based time-limited memory and signal…

Applied Physics · Physics 2023-09-22 David Winge , Magnus Borgström , Erik Lind , Anders Mikkelsen

Various near-term quantum networking applications will benefit from low-loss, fiber-coupled photonic quantum memory devices with high efficiencies. We demonstrate a fiber-coupled loop-and-switch quantum memory platform with a pass-through…

Quantum Physics · Physics 2025-10-23 Sandra Cheng , Carson Evans , Todd Pittman

The XOR Boolean logic gate is widely used in many applications such as encryption (XOR ciphers), binary addition (half- and full-adders), error detection (parity bits), etc. but is challenging to construct because of its demanding…

Mesoscale and Nanoscale Physics · Physics 2026-03-10 Supriyo Bandyopadhyay

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…

Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…

Hardware Architecture · Computer Science 2024-11-08 Narendra Singh Dhakad , Santosh Kumar Vishvakarma

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…

Mesoscale and Nanoscale Physics · Physics 2011-11-02 R. P. G. McNeil , M. Kataoka , C. J. B. Ford , C. H. W. Barnes , D. Anderson , G. A. C. Jones , I. Farrer , D. A. Ritchie

Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in…

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…

Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…

Applied Physics · Physics 2021-02-16 Yiğit Demirağ , Ekmel Özbay , Yusuf Leblebici

One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

Mesoscale and Nanoscale Physics · Physics 2018-04-11 Yang Lu , Jung Ho Yoon , Yanhao Dong , I-Wei Chen

Understanding the chemical state of individual ions in solutions is crucial for advancing knowledge of complex systems. However, sensing systems at the single-ion level in liquid environments remains a significant challenge. A strategy is…

Mesoscale and Nanoscale Physics · Physics 2025-11-04 Yecun Wu , Kun Xu , Hori Pada Sarker , Takashi Taniguchi , Kenji Watanabe , Frank Abild-Pedersen , Arun Majumdar , Yi Cui , Yan-Kai Tzeng , Steven Chu

The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…

Materials Science · Physics 2023-06-21 Farhana Yasmin Rahman , Debajyoti Bhattacharjee , Syed Arshad Hussain

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…

Quantum systems are inherently dissipation-less, making them excellent candidates even for classical information processing. We propose to use an array of large-spin quantum magnets for realizing a device which has two modes of operation:…

Quantum Physics · Physics 2015-10-29 Ning Jia , Leonardo Banchi , Abolfazl Bayat , Guangjiong Dong , Sougato Bose

Physics-inspired computing paradigms, such as Ising machines, are emerging as promising hardware alternatives to traditional von Neumann architectures for tackling computationally intensive combinatorial optimization problems (COPs). While…

Applied Physics · Physics 2026-03-17 Sai Li , Yihao Zhang , Albert Lee , Zheng Zhu , Lang Zeng , Peng Wang , Lei Gao , Di Wu , Weisheng Zhao

Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…

A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The…

Superconductivity · Physics 2019-07-16 Serhii E. Shafraniuk , Ivan P. Nevirkovets , Oleg A. Mukhanov