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The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the…
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon…
Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier offering a pathway to engineer larger electromechanical and…
Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high…
We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The…
Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual…
NiO/ZnO-based thin films, including single-layer and heterostructure configurations, were synthesized to investigate the influence of stacking order on their electrochemical performance for supercapacitor applications. To improve the…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
Among the n-type metal oxide materials used in the planar perovskite solar cells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its relatively high electron mobility, high transparency, and versatile…
While $Hf_{0.5}Zr_{0.5}O_2$ (HZO) thin films hold significant promise for modern nanoelectronic devices, a comprehensive understanding of the interplay between their polycrystalline structure and electrical properties remains elusive. Here,…
Measurements on 'free-standing' single crystal barium titanate capacitors with thicknesses down to 75nm show a dielectric response typical of large single crystals rather than conventional thin films. There is a notable absence of any…
Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the…
HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has…
We investigated the electronic and magnetic properties of fully oxidized BaFeO3 thin films, which show ferromagnetic-insulating properties with cubic crystal structure, by hard x-ray photoemission spectroscopy (HAXPES), x-ray absorption…
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…
We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate stack. We have fabricated FeFET devices with different…
Wurtzite ferroelectrics are rapidly emerging as a promising material class for next-generation non-volatile memory technologies, owing to their large remanent polarization, intrinsically ordered three-dimensional crystal structure, and full…
Here we investigate epitaxial Hf0.5Zr0.5O2 ferroelectric thin films as potential candidates to be used as non-volatile electric-field-modulated thermal memories. The electric-field dependence of the thermal conductivity of…
The metastable nature of the ferroelectric phase of HfO$_2$ is a significant impediment to its industrial application as a functional ferroelectric material. In fact, no polar phases exist in the bulk phase diagram of HfO$_2$, which shows a…
High entropy oxides (HEO) hold the potential to revolutionize the conventional material paradigms by leveraging high order of chemical disorder that induces highly desirable exotic phases for advanced applications. Here, we devise a…