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The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…
Activation of shallow acceptor state has been observed in ion irradiated and subsequently air annealed polycrystalline ZnO material. Low temperature photoluminescence (PL) spectrum of the sample exhibits clear signature of acceptor bound…
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius,…
TiO$_2$ and WO$_3$ are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO$_3$ and TiO$_2$ have been investigated leading to improvements of key performance…
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an…
Phase-formation of surface alloying by spinodal decomposition has been studied for the first time at an electrified interface. For this aim Zn was electrodeposited on Au(111) from the ionic liquid AlCl3-MBIC (58:42) containing 1 mM Zn(II)…
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20…
We study the spin-density-wave instabilities in the quasi-one-dimensional conductor (TMTSF)_2ClO_4. The orientational order of the anions ClO_4 doubles the unit cell and leads to the presence of two electrnic bands at the Fermi level. From…
High-quality single crystals of NdFeAsO$_{0.65}$F$_{0.35}$ (the transition temperature $T_{\rm c} \simeq 30.6$~K) were studied in zero-field (ZF) and transverse-field (TF) muon-spin rotation/relaxation ($\mu$SR) experiments. An upturn in…
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for…
Neutrinoless double-beta decay (0vbb) experiments constitute a pivotal probe for elucidating the characteristics of neutrinos and further discovering new physics. Compared to the neutron transmutation doped germanium thermistors (NTD-Ge)…
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping…
This study reports on the optical, structural, and dielectric properties of aluminum tantalum oxide (Al$_x$Ta$_y$O$_z$) thin films deposited at low temperature on silicon and steel substrates by pulsed direct current reactive magnetron…
Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven {\pi}/2 rotation of the N\'eel vector. Nonvolatile, voltage-controlled N\'eel vector…
Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around…
We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The…
A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including…
Exploitation of transparent conductive oxides (TCO) to implement an energy-autonomous sensor node for a wireless sensor network (WSN) is studied and a practical solution presented. In the practical implementations, flexible and rigid…
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary…