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Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Materials Science 2010-11-02 v1
Authors: Yuki Nagao , Akira Yoshikawa , Kunihito Koumoto , Takeharu Kato , Yuichi Ikuhara , Hiromichi Ohta
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Abstract

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 {\mu}V/K, which is an order magnitude smaller than that of semiconductors (-198 {\mu}V/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

Keywords

anatase TiO2 thermopower electronic density of states thin film transistors conduction band tail states

Cite

@article{arxiv.1009.0400,
  title  = {Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation},
  author = {Yuki Nagao and Akira Yoshikawa and Kunihito Koumoto and Takeharu Kato and Yuichi Ikuhara and Hiromichi Ohta},
  journal= {arXiv preprint arXiv:1009.0400},
  year   = {2010}
}

Comments

11 pages, 4 figures

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