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The chemical deposition of high-performance Zinc Oxide (ZnO) thin films is challenging, thus significant efforts have been devoted during the past decades to develop cost-effective, scalable fabrication methods in gas phase. This work…

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In$_2$O$_3$) field-effect transistors (FETs)…

We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes by using nickelocene as a precursor, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. The…

Cu doped transparent ZnO thin films were spin coated on conductive glass substrates. The samples were subsequently annealed in air for 1 hour at 500 0C in order to form the phase of ZnO. ZnO samples were doped with different Cu molar…

Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and…

We report comprehensive resistivity measurements of single crystalline samples of the Ba(Fe(1-x)Co(x))2As2 high Tc superconductor under hydrostatic pressure up to 2.75 GPa and over a broad concentration range, 0 < x < 0.099. We show that…

We have successfully controlled thermoelectric properties of ZnO by changing carrier concentration using an electric double layer transistor (EDLT) which is a feld effect transistor gated by electrolyte solution. The resistivity and the…

This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering the application as transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen…

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…

BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…

Tin monoxide (SnO) is a p-type oxide semiconductor whose electronic properties can be widely modified via atomic-scale engineering. Using density functional theory, we investigate the electronic and magnetic properties of transition-metal…

LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were…

LaTiO$_{3+\delta/2}$, NdTiO$_{3+\delta/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+\delta/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique.…

A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si…

We present an enhancement of spin properties of the shallow (<5nm) NV centers by using ALD to deposit titanium oxide layer on the diamond surface. With the oxide layer of an appropriate thickness, increases about 2 up to 3.5 times of both…

The study uses AACVD technology with nitrogen carrier gas to make AZO thin films through which it determines structural, optical, and morphological changes from 0 to 20 percent aluminum doping. The depositions took place at 400 degrees…

The Si based TiO2 thin films were prepared via the combination both of Sol-Gel and Spin-Coating method. The films were sintered at 850 degrees Celsius for half an hour, and the resulting films were characterized by X-ray diffraction (XRD)…

Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-\delta}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The…

Layered organic conductors (BEDO-TTF)_2ReO_4*H_2O (metal) and (BEDT-TTF)_xDy(NO_3)_z (paramagnetic insulator) are studied by CW-EPR and SQUID methods. A correlation in resonance and transport properties of both compounds is attributed to a…

The plasma deposition wall coated composite of ZnO and {\alpha}-Fe2O3 (ZF-W) after exposure to ~ 2000 {\deg}C, mostly considered as waste-materials and cleaned out from the deposition unit, was subjected to anneal at 300, 500 and 1000…