Related papers: High Performance 4H-SiC Optically Controlled MOS T…
VO2 material is promising for developing energy-saving "smart window", owing to its thermochromic property induced by metal-insulator transition (MIT). However, its practical application is greatly limited by the relatively high critical…
Here, we study the controllable optical responses in a two-cavity optomechanical system, especially on the $\mathit{perfect}$ optomechanically induced transparency (OMIT) in the model which has never been studied before. The results show…
Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and…
The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…
This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than…
Networks inside current data centers comprise a hierarchy of power-hungry electronic packet switches interconnected via optical fibers and transceivers. As the scaling of such electrically-switched networks approaches a plateau, a…
We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle…
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and…
Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…
In the past decades, silicon photonic integrated circuits (PICs) have been considered as a promising approach to solve the bandwidth bottleneck in optical communications and interconnections. Despite significant advances, large-scale PICs…
Programmable photonic integrated circuits (PICs) offer a unique opportunity to create a flexible platform, akin to electronic field programmable gate array (FPGA). These photonic PGAs can implement versatile functionalities for applications…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
An electrode contact-related mechanism for the operational instability of organic electronic devices is proposed and confirmed via observation of a water-induced change in charge-injection barrier eights at the…
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid…
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse…
A compact (15{\mu}m${\times}${\mu}m) and highly-optimized 2${\times}$2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1dB, static and dynamic contrast are 40dB and >20dB…