Related papers: High Performance 4H-SiC Optically Controlled MOS T…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Controlling the optical response of a medium through suitably tuned coherent electromagnetic fields is highly relevant in a number of potential applications, from all-optical modulators to optical storage devices. In particular,…
We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
Electro-optic modulation is central to classical optical communications and emerging quantum technologies. High-confinement optomechanical crystal modulators enable microwave-optical transduction through strong optomechanical interactions…
Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible regime. Here, we…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
Quarter-wave OLEDS are microcavity devices that can operate in the low finesse limit and achieve high efficiency (> 300 lm/W) by using interference to reduce the onset current for the transition to stimulated emission. In this work we study…
High resolution resistors capable of detecting minuscule currents are vital for advanced sensors, but existing off-shelf models struggle with inconsistent resistance under varying voltages. The underlying physics of this issue is rooted in…
We propose and demonstrate a passively biased 2 by 2 thermo-optic switch with high power efficiency and fast response time. The device benefits from the highly concentrated optical field of a slot waveguide mode and the strong thermo-optic…
Increasing datacenter demands require power-efficient optical interconnects. However, a conventional standard transmitter using a silicon rib-waveguide Mach-Zehnder modulator and voltage-mode driver has low efficiency and consumes…
The growing demand for more efficient data transmission has made nanoscale high-throughput all-optical switching a critical requirement in modern telecommunication systems. Metasurface-based platforms offer unique advantages because of…
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC MOSFETs. To evaluate the mobility by interface roughness, we drew a boundary line between amorphous insulator and crystalline 4H-SiC in…
In this paper, we present a novel design of electro-optic modulator and optical switching device, based on current integrated optics technique. The advantages of our optical switching device are broadband of input light wavelength,…
A microwave-optical photon converter with high efficiency ($>50$ %) and low added noise ($\ll 1$ photon) could enable the creation of scalable quantum networks where quantum information is distributed optically and processed in the…
Unbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead…
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
A quantum interface between microwave and optical photons is essential for entangling remote superconducting quantum processors. To preserve fragile quantum states, a transducer must operate efficiently while generating less than one photon…
Optomechanical crystals (OMCs) are a promising and versatile platform for transduction between mechanical and optical fields. However, the release from the substrate used in conventional suspended OMCs also prevents heat-carrying noise…