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An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…
A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The…
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…
Conventional image sensors are only responsive to the intensity variation of the incoming light wave. By encoding the wavefront information into the balanced detection scheme, we demonstrate an image sensor pixel design that is capable to…
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…
High resolution image sensors require electrical access to each individual pixel for signal readout. Such access is especially challenging for ultra-miniaturized pixels, for heterogeneously integrated sensing and readout layers in…
Hyperspectral cameras generate a large amount of data due to the presence of hundreds of spectral bands as opposed to only three channels (red, green, and blue) in traditional cameras. This requires a significant amount of data transmission…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…
Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…
We introduce the concept of `hyperpixels' in which each element of a pixel filter array (suitable for CMOS image sensor integration) has a spectral transmission tailored to a target spectral component expected in application-specific…
Energy-efficient image acquisition on the edge is crucial for enabling remote sensing applications where the sensor node has weak compute capabilities and must transmit data to a remote server/cloud for processing. To reduce the edge energy…
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in…
Some applications in scientific imaging, like space-based high-precision photometry, benefit from a detailed characterization of the sensitivity variation within a pixel. A detailed map of the intra-pixel sensitivity (IPS) allows to…
In the recent years, pixel-based perceptual algorithms have been successfully applied for privacy-preserving deep learning (DL) based applications. However, their security has been broken in subsequent works by demonstrating a…
This paper presents an FeFET-based active pixel sensor that performs in-sensor multiply-and-accumulate (MAC) operations by leveraging the multi-domain polarization states of ferroelectric layers. The proposed design integrates a…
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…