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Quantized anomalous Hall effects (QAHEs) occur in remarkable electronic states which possess not only quantized Hall signals but in some cases regions of dissipationless electron transport. The initial demonstrations of a QAHE in a…
The delayed explosive desorption of particles from Ar matrices doped with methane stimulated by an electron irradiation was studied in the extended concentration range from 1% to 10% using emission spectroscopy methods. Registration of the…
In conventional transmon qubits, decoherence is dominated by a large number of parasitic two-level systems (TLS) residing at the edges of its large area coplanar shunt capacitor and junction leads. Avoiding these defects by improvements in…
In a multiprocessor system on chip (MPSoC) IC the processor is one of the highest heat dissipating devices. The temperature generated in an IC may vary with floor plan of the chip. This paper proposes an integration and thermal analysis…
Heat and mass transfer inside the porous wick of a capillary evaporator is studied using a mixed pore-network model. The impact of the thermal conductivity of the wick on the overheating limit (defined as the difference between the maximum…
Advanced characterisation techniques were used on LPBF Ti-6Al-4V samples produced on a heated base plate. When the substrate temperature is 100{\deg}C the elongation is 6\%, which increases and peaks at 10\% at 570{\deg}C, then sharply…
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT…
Chiral-induced spin selectivity (CISS), whereby helical molecules polarize the spin of electrical current, is an intriguing effect with potential applications in nanospintronics. In this nascent field, the study of paramagnetic chiral…
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors.…
In highly anisotropic layered cuprates such as Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ tunneling measurements on a stack of intrinsic junctions in a high-bias range are often susceptible to self-heating. In this study we monitored the temperature…
Superconducting radio frequency accelerating cavities made with different material layers, such as copper, Nb or Nb3Sn, are susceptible to thermoelectric effects due to differences in Seebeck coefficients between the metals. A temperature…
Recent experiments have shown that, in agreement with previous theoretical predictions, superconductivity in metallic nanostructures can be enhanced with respect to the bulk limit. Motivated by these results we study finite size effects…
We study nonlinear transport effects on the maximum efficiency and power for both inelastic and elastic thermoelectric generators. The former refers to phonon-assisted hopping in double quantum-dots, while the latter is represented by…
Thermally aware design of 2.5D and 3D advanced packaging systems will require fast, accurate, and powerful thermal analysis of chiplets, stacks, and packages. These systems contain multiple materials with non-linear heat transfer properties…
Measuring nanoscale local temperatures, particularly in vertically integrated and multi-component systems, remains challenging. Spectroscopic techniques like X-ray absorption and core-loss electron energy-loss spectroscopy (EELS) are…
The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory.…
We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. We find that the MW increases with the…
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…
Fully-analog in-memory computing (IMC) architectures that implement both matrix-vector multiplication and non-linear vector operations within the same memory array have shown promising performance benefits over conventional IMC systems due…