Related papers: Self-Heating and Parasitic Effects in Multi-Tier C…
Efficiently capturing the three-dimensional spatiotemporal distributions of temperature is of great significance for alleviating hotspot issues in 3D FinFETs. However, most previous thermal simulations mainly focused on the steady-state…
In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultimate Quantum Capacitance Limit (UQCL) (where only one subband is occupied) in the presence of interface traps ($D_{it}$), parasitic…
Two-dimensional iron-chalcogenide intercalates display a remarkable correlation of the interlayer spacing with the enhancement of the superconducting critical temperature ($T_c$). In this work, synchrotron x-ray absorption ($XAS$, at Fe and…
Layered chalcogenides including Bi2Te3, Sb2Te3, Bi-Sb-Te ternary alloys and heterostructures are known as great thermoelectric, topological insulators and recently highlighted as plasmonic building blocks beyond noble metals. Here, we…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the…
The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…
The heat flux mitigation during the Thermal Quench (TQ) by the Shattered Pellet Injection (SPI) is one of the major elements of disruption mitigation strategy for ITER. It's efficiency greatly depends on the SPI and the target plasma, and…
We leverage 3D numerical simulations to study phase change materials (PCMs) cells under the effect of buoyancy forces. The solid PCM is heated from a source boundary, triggering melting. The source features multiple solid fins that protrude…
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source…
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention. Recently, we modeled this effect in the…
We report on high-pressure (p_max = 2.1 GPa) muon spin rotation experiments probing the temperature-dependent magnetic penetration depth in the layered superconductor 2H-NbSe_2. Upon increasing the pressure, we observe a substantial…
The discovery of high-temperature superconductivity in Fe-based compounds [1,2] has triggered numerous investigations on the interplay between superconductivity and magnetism [3] and, more recently, on the enhancement of transition…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
Switched-capacitor (SC) DC-DC voltage converters are widely used in power delivery and management of modern integrated circuits. Connected to a common supply voltage, SC converters exhibit cross-regulation/coupling effects among loads…
Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS) < 60 mV/decade has been proposed to overcome Boltzmann tyranny in its ballistic regime. However the scattering, especially by inelastic scattering may lead…
We model cuprate superconductors as an infinite layered lattice structure which contains a fluid of paired and unpaired fermions. Paired fermions, which are the superconducting carriers, are considered as noninteracting zero spin bosons…
We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
Lattice thermal conductivity ($\kappa_{\rm L}$) is a crucial characteristic of crystalline solids with significant implications for practical applications. While the higher order of anharmonicity of phonon gas model is commonly used for…