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Bismuth ferrite (BiFeO3) is one of the most promising multiferroics with a sufficiently high ferroelectric (FE) and antiferromagnetic transition temperatures, and magnetoelectric (ME) coupling coefficient at room temperature, and thus it is…
This paper reports a novel simulation methodology for analysis and prediction of substrate noise impact on analog / RF circuits taking into account the role of the parasitic resistance of the on-chip interconnect in the impact mechanism.…
Optimization and design of full-scale membrane distillation (MD) systems usually require Sherwood and Nusselt correlations that are developed from lab-scale systems. However, entrance effects in lab-scale systems can significantly impact…
Electrons in operating microelectronic semiconductor devices are accelerated by locally varying strong electric field to acquire effective electron temperatures nonuniformly distributing in nanoscales and largely exceeding the temperature…
The effect of substrate thickness and its Debye temperature on the bolometric response of the freestanding-membrane type of superconductor transition-edge detectors is investigated. The investigation is based on the calculation of the…
Due to embedded systems` stringent design constraints, much prior work focused on optimizing energy consumption and/or performance. Since embedded systems typically have fewer cooling options, rising temperature, and thus temperature…
A large, strongly temperature-dependent Nernst coefficient, $\nu$, is observed between $T$ = 2 K and 300 K for CeCu$_2$Si$_2$ and Ce$_{0.8}$La$_{0.2}$Cu$_2$Si$_2$. The enhanced $\nu(T)$ is determined by the asymmetry of the on-site Kondo…
Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that…
The full H-T phase diagram in the nematic superconductor FeSe is mapped out using specific-heat and thermal-expansion measurements down to 0.7 K and up to 30 T for both field directions. A clear thermodynamic signal of an underlying…
Advances in analytical scanning transmission electron microscopy (STEM) and microelectronic mechanical systems (MEMS) based microheaters have enabled in-situ materials characterization at the nanometer scale at elevated temperature. In…
We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to…
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT…
We investigated stability and the electronic structure of extended defects including anti-site domain boundaries and stacking faults in the kesterite-structured semiconductors, Cu$_2$ZnSnS$_4$ (CZTS) and Cu$_2$ZnSnSe$_4$ (CZTSe). Our hybrid…
We consider the problem of fault-tolerance in nanoscale algorithmic self-assembly. We employ a variant of Winfree's abstract Tile Assembly Model (aTAM), the two-handed aTAM, in which square "tiles" -- a model of molecules constructed from…
We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate stack. We have fabricated FeFET devices with different…
The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic…
We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…
The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…
Bulk FeSe becomes superconducting below 9\,K, but the critical temperature (T$_{c}$) is enhanced almost universally by a factor of $\sim$4-5 when it is intercalated with alkali elements. How intercalation modifies the structure is known…
Due to its incommensurate nature, moir\'e superlattices host not only acoustic phonons but also another type of soft collective modes called phasons. Here, we investigate the impact of electron-phason scattering on the transport properties…