Related papers: Melting of thin silicon films: a molecular dynamic…
Understanding thermal transport in silicon nanostructures is crucial for effective thermal management in semiconductor devices. In such nanostructures, boundary scattering can significantly reduce thermal conductivity. Diffusive boundary…
The deposition of one silicon monolayer on the silver (111) substrate in the temperature range 150-300$^\circ$C, gives rise to a mix of (4$\times$4), ($2\sqrt{3}\times 2\sqrt{3}$)R30$^\circ$ and ($\sqrt{13}\times\sqrt{13}$)R13.9$^\circ$…
10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device…
In silicon, lattice thermal conductivity plays an important role in a wide range of applications such as thermoelectric and microelectronic devices. Grain boundaries (GBs) in polycrystalline silicon can significantly reduce lattice thermal…
It is investigated the formation of the phase composition and structure in the nanoscaled CoSbx (30 nm) films deposited by the method of molecular-beam epitaxy on the substrates of the oxidated monocrystalline silicon at 200 C and following…
The integration of machine learning and robotics into thin film deposition is transforming material discovery and optimization. However, challenges remain in achieving a fully autonomous cycle of deposition, characterization, and…
The melting point of silicon in the cubic diamond phase is calculated using the random phase approximation (RPA). The RPA includes exact exchange as well as an approximate treatment of local as well as non-local many body correlation…
Temperature-responsive properties of surface-attached poly(N-isopropylacrylamide) (PNIPAM) network films with well-controlled chemistry are investigated. The synthesis consists of cross-linking and grafting preformed ene-reactive polymer…
Molecular dynamic simulations were performed for ice Ih with a free surface by using four water models, SPC/E, TIP4P, TIP4P/Ice and TIP4P/2005. The behavior of the basal plane, the primary prismatic plane and of the secondary prismatic…
A numerical method is developed to calculate the transition temperature of double or multi-layers consisting of films of super- and normal conductors. The approach is based on a dynamic interpretation of Gorkov's linear gap equation and is…
The wetting behavior of thin films of 4'-n-octyl-4-cyanobiphenyl (8CB) on Si is investigated via optical and x-ray reflectivity measurement. An experimental phase diagram is obtained showing a broad thick-thin coexistence region spanning…
We have investigated the reduction of the glass transition temperature, $T_g$, for thin supported films of particularly small molecular weight ($M_W$ = 2 kg/mol) polystyrene, and found good agreement with earlier studies on larger…
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…
We investigate the low temperature properties of two-dimensional Lennard-Jones glass films, prepared in silico both by liquid cooling and by physical vapor deposition. We identify deep in the solid phase a crossover temperature $T^*$, at…
The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…
We perform numerical and experimental studies on the melting process of thin films initiated by a small hole. The presence of a non-trivial capillary surface, namely the liquid/air interface, leads to a few counter-intuitive results: (1)…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann…