Related papers: Sliding Ferroelectricity Driven Spin-Layertronics …
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van…
Diverse interlayer tunability of physical properties of two-dimensional layers mostly lies in the covalent-like quasi-bonding that is significant in electronic structures but rather weak for energetics. Such characteristics result in…
Couplings between ferroelectric and magnetic orders offer promising routes toward low-dissipation electronics. However, such couplings are notably rare, largely due to the poor compatibility between insulating band structures and…
Magnetic states with zero magnetization but non-relativistic spin splitting are outstanding candidates for the next generation of spintronic devices. Their electron-volt (eV) scale spin splitting, ultrafast spin dynamics and nearly…
In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…
Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have…
Alterelectricity is a compensated ferroic state in which quadrupolar electronic order reshapes low-energy electronic structure without producing a net polarization. Here we show that a moir\'e superlattice can turn such order into a…
In synthetic antiferromagnets (SAFs) the combination of antiferromagnetic order and synthesis using conventional sputtering techniques is combined to produce systems that are advantageous for spintronics applications. Here we present the…
Altermagnets host unconventional spin-polarized bands despite zero net magnetization, but controlling their spin structure remains challenging. We propose a multi-field approach to engineer spin polarization in $d$-wave altermagnets using…
Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications.…
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a non-ferroelectric polar material becomes a ferroelectric by interfacing with a thin ferroelectric layer. Strongly polar…
This article explores the deep interconnections among three seemingly unrelated concepts in condensed matter physics: electronic liquid crystal phases, multipole expansions, and altermagnetism. At the heart of these phenomena lies a shared…
Altermagnets, characterized by zero net magnetization and momentum-dependent spin splitting, have recently garnered significant attention due to their potential applications in a variety of fields. Here, we propose a symmetry-engineering…
We propose a new type of spin-valley locking (SVL), named $\textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin…
Two-dimensional ferroelectrics with robust polarization offer promising opportunities for non-volatile memory, field-effect transistors, and optoelectronic devices. However, the impact of lattice deformation on polarization and photoinduced…
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state,…
Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial…