Related papers: Gate Stack Engineering for High-Mobility and Low-N…

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si…

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation…

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…

The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…

Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control.…

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…

Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing.…

Different groups worldwide have been working with the GlobalFoundries 22nm platform (22FDX) with the hopes of industrializing the fabrication of Si spin qubits. To guide this effort, we have performed a systematic study of six of the…

Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

We report on recent experimental results from transport measurements with large Hall bars made of high mobility GaAs/AlGaAs heterostructures. Thermally activated conductivities and hopping transport were investigated in the integer quantum…

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…

Transport probes the motion of quasiparticles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has been rarely explored.…

We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical…

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…

The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in…

Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…

Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…