Related papers: Modeling of a magnetic field sensor based on spin …
Magnetoresistance (MR) sensors provide cost-effective solutions for diverse industrial and consumer applications, including emerging fields such as internet-of-things (IoT), artificial intelligence and smart living. Commercially available…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR…
Magnetic position sensors find extensive applications in various industrial sectors and consumer products. However, measuring angles in the full range of 0{\deg} to 360{\deg} in a wide field range using a single magnetic sensor remains a…
We present a spin Hall magnetoresistance sensor based on a NiFe/Pt multiring bridge structure, which exhibits high sensitivity and good linearity in two perpendicular directions within the sensor plane. Under DC excitation, it responds…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in…
We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose…
We demonstrate an ultrathin and semitransparent anisotropic and spin Hall magnetoresistance sensor based on NiFe/Pt heterostructure. The use of spin-orbit torque effective field for transverse biasing allows to reduce the total thickness of…
Spin Hall magnetoresistance (SMR) measurements provide a way to probe the surface spin structure of insulating magnetic materials. Such measurements produce resistance signals of the form {$\Delta$}R {$\propto$}…
We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance…
We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}$ (SCFO)|Pt heterostructure wherein a highly tunable transverse conical…
We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…
The Stoner-Wohlfarth model provides an efficient analytical model to describe the behavior of magnetic layers within xMR sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
Due to their compact size and exceptional sensitivity at room temperature, magnetoresistance (MR) sensors have garnered considerable interest in numerous fields, particularly in the detection of weak magnetic signals in biological systems.…