Related papers: Modeling of a magnetic field sensor based on spin …

We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR).…

Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored…

Spin Hall magnetoresistance (SMR), the variation in resistance in a heavy metal (HM) with the magnetization orientation of an adjacent ferromagnet (FM), has been extensively studied as a powerful tool for probing surface magnetic moments in…

The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response…

The spin torque ferromagnetic resonance (STFMR) is one of the popular methods for measurement of the spin Hall angle (SHA). However, in order to accurately determine SHA from STFMR measurements, the acquired data must be carefully analyzed:…

Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit…

A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…

Conventional spin Hall nano-oscillators (SHNOs) face fundamental power limitations due to the low anisotropic magnetoresistance (AMR < 0.3%) of ferromagnetic layers. To address this, we developed a synthetic antiferromagnetic spin-valve…

Magnetic skyrmions are topologically protected local magnetic solitons that are promising for storage, logic or general computing applications. In this work, we demonstrate that we can use a skyrmion device based on [W/CoFeB/MgO] 1 0…

We formulate a theory of the AC spin Hall magnetoresistance (SMR) in a bilayer system consisting of a magnetic insulator such as yttrium iron garnet (YIG) and a heavy metal such as platinum (Pt). We derive expressions for the DC voltage…

We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is…

We utilize spin Hall magnetoresistance (SMR) measurements to experimentally investigate the pure spin current transport and magnetic properties of nickel ferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures. We use…

In bilayers consisting of a normal metal (N) with spin-orbit coupling and a ferromagnet (F), the combination of the spin-Hall effect, the spin-transfer torque, and the inverse spin-Hall effect gives a small correction to the in-plane…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

This work presents a unified theoretical framework for spin-resolved electron transport in magnetic point contacts (PCs) in nanoscale dimensions. This work advances existing research by presenting a model which seamlessly transitions…

We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…

We develop a theory of angle-dependent magnetoresistance (ADMR) in metallic altermagnets coupled to ferromagnetic insulators and establish criteria that distinguish them from conventional compensated magnets with spin-orbit coupling. We…

Spin-torque ferromagnetic resonance (ST-FMR) particularly using magnetic insulators and heavy metals possessing a giant spin Hall effect (SHE) has gotten a lot of attention for the development of spintronic devices. To devise complex…

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…

In this paper, we report the observation of spin-orbit magnetoresistance (SOMR) in ferromagnetic metal/heavy metal/MgO system. We measure the magnetoresistance as the function of the thickness of heavy metal (HM) for CoFeB/HM/MgO and…