The Stoner-Wohlfarth model provides an efficient analytical model to describe the behavior of magnetic layers within xMR sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model. Furthermore the applicability of the SW model is verified by comparison with micromagnetic energy minimization results.
@article{arxiv.1408.5217,
title = {A Device model for xMR Sensors based on the Stoner-Wohlfarth model},
author = {Florian Bruckner and Bernhard Bergmair and Hubert Brueckl and Pietro Palmesi and Anton Buder and Armin Satz and Dieter Suess},
journal= {arXiv preprint arXiv:1408.5217},
year = {2015}
}