Related papers: Disorder-driven stochastic dynamics in Mott resist…
In the present paper, we report on the switching dynamics of both single and coupled VO2-based oscillators, with resistive and capacitive coupling, and explore the capability of their application in oscillatory neural networks. Based on…
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…
Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…
Vanadium dioxide (VO$_2$) exhibits hysteresis in resistance while undergoing a thermally driven insulator-metal transition (IMT). Understanding the nonequilibrium effects in resistance is of great interest, as VO$_2$ is a strong candidate…
Motivated by recent experiments on vanadium spinels, $A$V$_2$O$_4$, that show an increasing degree of electronic delocalization for smaller cation sizes, we study the evolution of orbital ordering (OO) between the strong and…
While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…
Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…
Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field…
The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…
Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…
We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show that ion irradiation allows to modify the magnetic and the…
We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…
An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…
The Friedel oscillations resulting from coupling a quantum dot to one edge of a disordered one-dimensional wire in the Mott insulator regime, are calculated numerically using the DMRG method. By investigating the influence of the disorder…